Positive resist composition and patterning process

ABSTRACT

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring unite (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an add labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

CROSS-REFERENCE TO RELATED APPLICATION

This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-125147 filed in Japan on Jul. 4, 2019, the entire contents of which are hereby incorporated by reference.

TECHNICAL FIELD

This invention relates to a positive resist composition and a patterning process using the composition.

BACKGROUND ART

To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. The logic devices used in smart phones or the like drive forward the miniaturization technology. Logic devices of 10-nm node are manufactured in a large scale using a multi-patterning lithography process based on ArF lithography.

In the application of lithography to next 7-urn or 5-nm node devices, the increased expense and overlay accuracy of multi-patterning lithography become tangible. The advent of EUV lithography capable of reducing the number of exposures is desired.

Since the wavelength (13.5 nm) of extreme ultraviolet (EUV) is shorter than 1/10 of the wavelength (193 nm) of ArF excimer laser, the EUV lithography achieves a high light contrast, from which a high resolution is expectable. Because of the short wavelength and high energy density of EUV, an acid generator is sensitive to a small dose of photons. It is believed that the number of photons available with EUV exposure is 1/14 of that of ArF exposure. In the EUV lithography, the phenomenon that the edge roughness (LER, LWR) of hue patterns or the critical dimension uniformity (CDU) of hole patterns is degraded by a variation of photon number is considered a problem.

Aiming to reduce a photon number variation, m attempt was made to render the resist film mote absorptive so that the number of photons absorbed in the resist film is increased. For example, among halogens, iodine is highly absorptive to EUV of wavelength 13.5 nm. Patent Documents 1 to 3 disclose to use iodized resins as the EUV resist material. On use of such iodized polymers, the number of photons absorbed in the resist film increases due to more absorption of EUV. It is then expected that the amount of acid generated is increased, leading to an increase of sensitivity and improvements in LWR and CDU. In fact, however, the iodized polymers are only sparsely soluble in the developer or alkaline aqueous solution, leading to a lowering of dissolution contrast and degradations of LWR and CDU. There is the demand for a resist material having satisfactory light absorption and dissolution contrast.

CITATION LIST

-   Patent Document 1: JP-A 2015-161823 -   Patent Document 2: WO 2013/024777 -   Patent Document 3: JP-A 2018-004812

SUMMARY OF INVENTION

An object of the present invention is to provide a positive resist composition which exhibits a higher sensitivity and resolution than conventional positive resist compositions, low LER or LWR and improved CDU, and forms a pattern of good profile after exposure and development, and a patterning process using the resist composition.

One approach to a resist material having high sensitivity and resolution, low LER or LWR and improved CDU is to minimize the acid diffusion distance. This invites a lowering of sensitivity and a drop of dissolution contrast, raising the problem that the resolution of a two-dimensional pattern such as hole pattern is reduced. It is pointed out that upon exposure to high-energy radiation, typically EUV, the number of photons absorbed in the resist film is so small that LWR or CDU is degraded. The resist film must be modified more absorptive to EUV to increase the number of photons absorbed. Iodine is typical of the EUV absorptive atom. Since iodine has a large atomic weight, iodized compounds are less soluble in the developer. Because of the shortage of dissolution contrast, LWR or CDU can be degraded.

Making extensive investigations in search for a positive resist material capable of meeting the current requirements including high sensitivity and resolution, low LER or LWR and improved CDU, the inventors have found the following. Unexpectedly, better results are obtained when a polymer comprising recurring units having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring is used as a base polymer. Since the polymer contains iodine with high absorption or bromine with an ionization ability and efficient secondary electron generation, it absorbs numerous photons to generate secondary electrons, with their energy transfer to an acid generator resulting in an increase of sensitivity. Since the fluorosulfonic acid having an iodized or brominated aromatic ring has approximately the same acid strength as the fluorosulfonic acid generated by the acid generator, acid exchange occurs smoothly and frequently. Thus the acid generation points are averaged, leading to an improvement in LWR or CDU. In an alkaline developer, the fluorosulfonic acid having an iodized or brominated aromatic ring is separated from the polymer while forming a salt with the developer, avoiding any drop of dissolution contrast. Thus, both high light absorption and high dissolution contrast are met.

For further improving the dissolution contrast, recurring units having a carboxyl or phenolic hydroxyl group in which the hydrogen is substituted by an acid labile group are incorporated into the base polymer in addition to the recurring units having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring. There is obtained a positive resist composition, especially chemically amplified positive resist composition, having a high sensitivity, a significantly increased contrast of alkali dissolution rate before and after exposure, a remarkable acid diffusion-suppressing effect, a high resolution, a good pattern profile after exposure, and reduced LER or LWR. The composition is thus suitable as a fine pattern forming material for the manufacture of VLSIs and photomasks.

In one aspect, the invention provides a positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring, and recurring units of at least one type selected from recurring units (b1) having a carboxyl group substituted with an add labile group and recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group.

In a preferred embodiment, the recurring units (a) have the formula (a).

Herein R^(A) is hydrogen or methyl. X^(1A) is a single bond, ester bond or amide bond. X^(1B) is a single bond or a C₁-C₂₀ di- or trivalent hydrocarbon group which may contain bond, carbonyl moiety, ester bond, amide bond, sultone moiety, lactam moiety, carbonate moiety, halogen, hydroxyl moiety or carboxyl moiety. R¹, R² and R³ are each independently hydrogen, a C₁-C₁₂ straight or branched alkyl group, C₂-C₁₂ straight or branched alkenyl group, C₆-C₁₂ aryl group, or C₇-C₁₂ aralkyl group, R¹ and R², or R¹ and X^(1B) may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain oxygen, sulfur, nitrogen or a double bond. R⁴ is a hydroxyl group, carboxyl group, fluorine, chlorine, bromine, amino group, or a C₁-C₂₀ alkyl group, C₁-C₂₀ alkoxy group, C₂-C₂₀ alkoxycarbonyl group, C₂-C₂₀ acyloxy group, or C₁-C₂₀ alkylsulfonyloxy group, which may contain fluorine, chlorine, bromine, hydroxyl, amino, or C₁-C₁₀ alkoxy moiety, or —NR^(4A)—C(═O)—R^(4B), or —NR^(4A)—C(═O)—O—R^(4B), R^(4A) is hydrogen or a C₁-C₆ alkyl group which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety, R^(4B) is a C₁-C₁₆ alkyl group, C₂-C₁₆ alkenyl group or C₆-C₁₂ aryl group, which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety, R⁴ may be the same or different when n and/or q is 2 or 3. Rf¹ to Rf⁴ are each independently hydrogen, fluorine or trifluoromethyl, at least one of Rf¹ to Rf⁴ being fluorine or trifluoromethyl, Rf¹ and Rf², taken together, may form a carbonyl group. X™ is iodine or bromine, X™ may be the same or different when m and/or q is 2 or more. L¹ is a single bond, ether bond, ester bond, or a C₁-C₆ alkanediyl group which may contain an ether bond or ester bond. L² is a single bond or a C₁-C₂₀ divalent linking group when q=1, or a C₁-C₂₀ (q+1)-valent linking group when q=2 or 3, the linking group may contain oxygen, sulfur or nitrogen; m is an integer of 1 to 5, n is an integer of 0 to 3, 1≤m+n≤5, p is 1 or 2, and q is an integer of 1 to 3.

In a preferred embodiment, the recurring units (b1) have the formula (b1) and the recurring units (b2) have the formula (b2).

Herein R^(A) is each independently hydrogen or methyl, R¹¹ and R¹² each are an acid labile group, R¹³ is a C₁-C₆ alkyl group, C₁-C₆ alkoxy group, C₂-C₆ acyl group, C₂-C₆ acyloxy group, halogen, nitro, or cyano, Y¹ is a single bond, phenyleue, naphthylene, or a C₁-C₁₂ linking group containing an ester bond and/or lactone ring, Y² is a single bond or ester bond, and k is an integer of 0 to 4.

In a preferred embodiment, the base polymer further comprises recurring units of at least one type selected from recurring units having the formulae (d1) to (d3).

Herein R^(A) is hydrogen or methyl. Z¹ is a single bond, phenyleue, —O—Z¹¹—, —C(═O)—O—Z¹— or —C(═O)—NH—Z¹¹—, wherein Z^(n) is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group or phenyleue group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety. Z² is a single bond or ester bond. Z³ is a single bond, —Z³¹—C(═O)—O—, —Z³¹—O—, or —Z³¹—O—C(═O)—, Z³¹ is a C₁-C₁₂ divalent hydrocarbon group which may contain a carbonyl moiety, ester bond, ether bond, bromine or iodine. Z⁴ is methylene, 2,2,2-trifluoro-1,1-ethanediyl or carbonyl. Z⁵ is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z⁵¹—, —C(═O)—O—Z⁵¹— or —C(═O)—NH—Z⁵¹—, Z⁵¹ is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group, phenylene group, fluorinated phenylene group or trifluoromethyl-substituted phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety. R²¹ to R²⁸ are each independently a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom, any two of R²³, R²⁴ and R²⁵ or any two of R²⁶, R²⁷ and R²⁸ may bond together to form a ring with the sulfur atom to which they are attached. M⁻ is a non-nucleophilic counter ion.

The resist composition may further comprise an acid generates capable of generating a sulfonic acid, sulfone inside or sulfone methide, an organic solvent, a dissolution inhibitor, and/or a surfactant.

In another aspect, the invention provides a pattern forming process comprising the steps of applying the positive resist composition defined above to form a resist film on a substrate, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer.

Preferably, the high-energy radiation is ArF excimer laser of wavelength 193 run, KrF excimer laser of wavelength 248 mm, EB, or EUV of wavelength 3 to 15 nm.

Advantageous Effects of Invention

The positive resist composition has a high decomposition efficiency of the acid generator, a remarkable acid diffusion-suppressing effect, a high sensitivity, and a high resolution, and forms a pattern of good profile with improved edge roughness and size variation after exposure and development. By virtue of these properties, the resist composition is fully useful in commercial application and best suited as a micropatterning material for photomasks by EB lithography or for VLSIs by EB or EUV lithography. The resist composition may be used not only in the lithography for forming semiconductor circuits, but also in the formation of mask circuit patterns, micromachines, and thin-film magnetic head circuits.

DESCRIPTION OF EMBODIMENTS

As used herein, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. “Optional” or “optionally” means that the subsequently described event or circumstances may or may not occur, and that description includes instances where the event car circumstance occurs and instances where it does not. The notation (Cn-Cm) means a group containing from n to m carbon atoms per group. As used herein, the term “iodized” or “brominated” compound indicates a compound containing iodine or bromine or a compound substituted with iodine or bromine. In chemical formulae. Me stands for methyl, and Ac for acetyl.

The abbreviations and acronyms have the following meaning.

EB: electron beam

EUV: extreme ultraviolet

Mw: weight average molecular weight

Mn: number average molecular weight

Mw/Mn: molecular weight dispersity

GPC: gel permeation chromatography

PEB: post-exposure bake

PAG: photoacid generator

LER: line edge roughness

LWR: line width roughness

CDU: critical dimension uniformity

Positive Resist Composition

One embodiment of the invention is a positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring and recurring units of at least one type selected from recurring units (b1) having a carboxyl group in which the hydrogen atom is substituted by an acid labile group and recurring units (b2) having a phenolic hydroxyl group in which the hydrogen atom is substituted by an acid labile group.

Preferably, the recurring units (a) have the formula (a).

In formula (a), R^(A) is hydrogen or methyl. X^(1A) is a single bond, ester bond or amide bond. X^(1B) is a single bond or a C₁-C₂₀ di- or bivalent hydrocarbon group which may contain an ether bond, carbonyl moiety, ester bond, amide bond, sultone moiety, lactam moiety, carbonate moiety, halogen, hydroxyl moiety or carboxyl moiety.

The C₁-C₂₀ di- or bivalent hydrocarbon group represented by X^(1B) may be straight, branched or cyclic and may be either aliphatic or aromatic. Examples thereof include C₁-C₂₀ alkanediyl groups, C₁-C₂₀ alkanetriyl groups, and C₆-C₂₀ arylene groups, and combinations thereof. Of these, preference is given to straight or branched alkanediyl groups such as methylene, ethylene, propane-1,2-diyl, propane-1,3-diyl, butane-1,2-diyl, butane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, heptane-1,7-diyl, octane-1,8-diyl, nonane-1,9-diyl, decane-1,10-diyl, undecane-1,11-diyl, and dodecane-1,12-diyl: C₃-C₁₀ cyclic alkanediyl groups such as cyclopentanediyl, cydohexanediyl, norbornanediyl, and adamantanediyl; arylene groups such as phenylene and naphthylene; combinations thereof; and bivalent forms of the foregoing groups with one hydrogen atom being eliminated.

In formula (a), R¹, R² and R³ are each independently hydrogen, a C₁-C₁₂ straight or branched alkyl group, C₂-C₁₂ straight or branched alkenyl group, C₆-C₁₂ aryl group, or C₇-C₁₂ aralkyl group. R¹ and R², or R¹ and X^(1B) may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain oxygen, sulfur, nitrogen or a double bond, with the ring being preferably of 3 to 12 carbon atoms.

Of the groups represented by R¹, R² and R³, examples of the C₁-C₁₂ straight or branched alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, and n-dodecyl. Examples of the C₂-C₁₂ straight or branched alkenyl group include vinyl, 1-propenyl, 2-propenyl butenyl and hexenyl. Examples of the C₆-C₁₂ aryl group include phenyl, tolyl, xylyl, 1-naphthyl and 2-naphtyl. Typical of the C₇-C₁₂ aralkyl group is benzyl.

In formula (a), R⁴ is a hydroxyl group, carboxyl group, fluorine, chlorine, bromine, amino group, or a C₁-C₂₀ alkyl group, C₁-C₂₀ alkoxy group, C₂-C₂₀ alkoxycarbonyl group, C₂-C₂₀ acyloxy group, or C₁-C₂₀ alkylsulfonyloxy group, which may contain fluorine, chlorine, bromine, hydroxyl, amino, or C₁-C₁₀ alkoxy moiety, or —NR^(4A)—C(═O)—R^(4B), or —NR^(4A)—C(═O)—O—R^(4B). R^(4A) is hydrogen or a C₁-C₆ alkyl group which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety. R^(4B) is a C₁-C₁₆ alkyl group. C₂-C₁₆ alkenyl group or C₆-C₁₂ aryl group, which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety. Groups R⁴ may be the same or different when n and/or q is 2 or 3.

The C₁-C₂₀ alkyl group represented by R⁴ may be straight, branched or cyclic, and examples thereof include methyl, ethyl n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, neopentyl, cyclopentyl, n-hexyl, cyclohexyl n-heptyl, n-octyl, 2-ethylhexyl, n-nonyl n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-pentadecyl, and n-hexadecyl. Examples of the alkyl moiety in the alkoxy, alkoxycarbonyl acyloxy and alkylsulfonyloxy groups are as exemplified above for the alkyl group. Examples of the C₁-C₆ alkyl group R^(4A) or the C₁-C₁₆ alkyl group R^(4B) are as exemplified above for the alkyl group, but of 1 to 6 carbon atoms or of 1 to 16 carbon atoms.

The C₂-C₁₆ alkenyl group represented by R^(4B) may be straight, branched or cyclic, and examples thereof include vinyl 1-propenyl, 2-propenyl, butenyl, hexenyl, and cyclohexenyl. Examples of the C₆-C₁₂ aryl group R^(4B) include phenyl, tolyl, xylyl, 1-naphthyl and 2-naphthyl.

Among others, R⁴ is preferably selected from hydroxyl, —NR^(4A)—C(═O)—R^(4B), —NR^(4A)—C(═O)—O—R^(4B), fluorine, chlorine, bromine, methyl, and methoxy. In formula (a), Rf¹ to Rf⁴ are each independently hydrogen, fluorine or trifluoromethyl, at least one of Rf¹ to Rf¹ being fluorine or trifluoromethyl. Rf¹ and Rf², taken together, may form a carbonyl group. Most preferably, both Rf¹ and Rf¹ are fluorine.

X^(BI) is iodine or bromine. Groups X^(BI) may be the same or different when m and/or q is 2 or more.

In formula (a), L¹ is a single bond, ether bond, ester bond, or a C₁-C₆ alkanediyl group which may contain an ether bond or ester bond. The alkanediyl group may be straight, branched or cyclic and examples thereof are as exemplified above for the C₁-C₂₀ alkanediyl group included in the divalent hydrocarbon groups X^(1B), but of 1 to 6 carbon atoms.

L² is a single bond or a C₁-C₂₀ divalent linking group when q=1, or a C₁-C₂₀ (q+1)-valent linking group when q=2 or 3, and the linking group may contain oxygen, sulfur or nitrogen.

In formula (a), m is an integer of 1 to 5, n is an integer of 0 to 3, and 1≤m+n≤5; preferably m is 1, 2 or 3, especially 2 or 3, and n is 0, 1 or 2; p is 1 or 2, and q is 1, 2 or 3.

Examples of the cation moiety in the monomer from which recurring units (a) are derived are shown below, but not limited thereto. Herein R^(A) is as defined above.

Examples of the anion moiety in the monomer from which recurring units (a) are derived are shown below, but not limited thereto. Herein X^(BI) is as defined above.

The recurring unit (a) has the structure of an ammonium salt of fluorosulfonic acid having an iodized or (nominated aromatic ring. Since this fluorosulfonic acid has approximately the same acid strength as the fluorosulfonic acid generated by the acid generator upon exposure, acid exchange reaction occurs. As the acid exchange reaction is repeated, the acid generation points are averaged, leading to an improvement in LWR or CDU. At the same time, since the recurring unit (a) contains iodine having high absorption or bromine having efficient electron generation, it generates secondary electrons during exposure to promote decomposition of the acid generator, leading to a high sensitivity. As a result, a high sensitivity, high resolution, and low LWR or improved CDU are achieved at the same time.

Iodine and bromine are less soluble in alkaline developer because of their relatively large atomic weight. When iodine or bromine is attached to the polymer backbone, a resist film in the exposed region is reduced in alkaline solubility, leading to losses of resolution and sensitivity and causing defect formation. When the recurring unit (a) is in an alkaline developer, the fluorosulfonic acid having iodized or brominated aromatic ring in recurring unit (a) forms a salt with an alkaline compound in the developer, separating from the polymer backbone. This ensures sufficient alkaline dissolution and minimizes defect formation.

The monomer from which recurring units (a) are derived is a polymerizable ammonium salt monomer. The ammonium salt monomer is obtainable from neutralization reaction of a monomer or amine compound of the structure corresponding to the cation moiety in the recurring unit from which one nitrogen-bonded hydrogen atom has been eliminated, with a fluorosulfonic acid having iodized or brominated aromatic ring.

The recurring unit (a) is formed from polymerization reaction using the ammonium salt monomer. Alternatively, the recurring unit (a) is formed by carrying out polymerization reaction of the monomer or amine compound to synthesize a polymer, adding a fluorosulfonic acid having iodized or brominated aromatic ring to the reaction solution or a solution of the purified polymer, and carrying out neutralization reaction.

The preferred recurring units (b1) and (b2) are recurring units having the formulae (b1) and (b2), respectively.

In formulae (b1) and (b2), R^(A) is each independently hydrogen or methyl. R¹¹ and R¹² each are an acid labile group. R¹³ is a C₁-C₆ alkyl group, C₁-C₆ alkoxy group, C₂-C₆ acyl group, C₂-C₆ acyloxy group, halogen, nitro, or cyano. Y¹ is a single bond, phenylene, naphthylene, or a C₁-C₁₂ linking group containing an ester bond or lactone ring or both. Y² is a single bond or ester bond, and k is an integer of 0 to 4.

Examples of the monomer from which recurring units (b1) are derived are shown below, but not limited thereto. Herein R^(A) and R¹¹ are as defined above.

Examples of the monomer from which recurring units (b2) are derived are shown below, but not limited thereto. Herein R^(A) and R¹² are as defined above.

The acid labile groups represented by R¹¹ and R¹² may be selected from a variety of such groups, for example, groups of the following formulae (AL-1) to (AL-3).

In formula (AL-1), R^(L1) is a C₄-C₂₀, preferably C₄-C₁₅ tertiary hydrocarbon group, a trialkylsilyl group in which each alkyl moiety has 1 to 6 carbon atoms, a C₄-C₂₀ alkyl group containing a carbonyl moiety or ester bond, or a group of formula (AL-3). A1 is an integer of 0 to 6.

The tertiary hydrocarbon group may be branched or cyclic, and examples thereof include tert-butyl, tert-pentyl, 1,1-diethylpropyl, 1-ethylcyclopentyl, 1-butylcyclopentyl, 1-ethylcyclohexyl, 1-butylcyclohexyl, 1-ethyl-2-cyclopentenyl, 1-ethyl-2-cyclohexenyl, 2-methyl-2-adamantyl, 2-tetrahydropyranyl, and 2-tetrahydrofuranyl. Examples of the trialkylsilyl group include trimethylsilyl, triethylsilyl, and dimethyl-tert-butylsilyl. The alkyl group containing a carbonyl moiety or ester bond may be straight, branched or cyclic, preferably cyclic and examples thereof include 3-oxocyclohexyl, 4-methyl-2-oxooxan-4-yl, and 5-methyl-2-oxooxolan-5-yl.

Examples of the acid labile group having formula (AL-1) include tert-butoxycarbonyl, tert-butoxycarbonylmethyl, tert-pentyloxycarbonyl, tert-pentyloxycarbonylmethyl, 1,1-diethylpropyloxycarbonyl, 1,1-diethylpropyloxycarbonylmethyl, 1-ethylcyclopentyloxycarbonyl, 1-ethylcyclopentyloxycarbonylmethyl, 1-ethyl-2-cyclopentenyloxycarbonyl, 1-ethyl-2-cyclopentenyloxycarbonylmethyl, 1-ethoxyethoxycarbonylmethyl, 2-tetrahydropyranyloxycarbonylmethyl, and 2-tetrahydrofuranyloxycarbonylmethyl.

Other examples of the acid labile group having formula (AL-1) include groups having the formulae (AL-1)-1 to (AL-1)-10.

Herein A1 is as defined above. R^(u) is each independently a C₁-C₁₀ alkyl group or C₆-C₂₀ aryl group. R^(u) is hydrogen or a C₁-C₁₀ alkyl group. R^(L10) is a C₂-C₁₀ alkyl group or C₆-C₂₀ aryl group. The alkyl group may be straight branched or cyclic.

In formula (AL-2), R^(L2) and R^(L3) are each independently hydrogen or a C₁-C₁₈, preferably C₁-C₁₀ alkyl group. The alkyl group may be straight, branched or cyclic and examples thereof include methyl, ethyl, propyl, isopropyl n-butyl sec-butyl tert-butyl, cyclopentyl cyclohexyl, 2-ethylhexyl and n-octyl R^(L4) is a C₁-C₁₈, preferably C₁-C₁₀ monovalent hydrocarbon group which may contain a heteroatom such as oxygen. The monovalent hydrocarbon group may be straight, branched or cyclic and typical examples thereof include C₁-C₁₈ alkyl groups, in which some hydrogen may be substituted by hydroxyl, alkoxy, oxo, amino or alkylamino. Examples of the substituted alkyl group are drown below.

A pair of R^(L2) and R^(L3), R^(L2) and R^(L4), or R^(L3) and R^(L4) may bond together to form a ring with tire carbon atom or carbon and oxygen atoms to which they are attached. R^(L2) and R^(L3), R^(L2) and R^(L4), or R^(L3) and R^(L4) to form a ring are each independently a C₁-C₁₈, preferably C₁-C₁₀ straight or branched alkanediyl group. The ring thus formed is preferably of 3 to 10, more preferably 4 to 10 carbon atoms.

Of the acid labile groups having formula (AL-2), suitable straight or branched groups include those having formulae (AL-2)-1 to (AL-2)-69, but are not limited thereto.

Of the acid labile groups having formula (AL-2), suitable cyclic groups include tetrahydrofuran-2-yl, 2-methyltetrahydrofuran-2-yl, tetrahydropyran-2-yl, and 2-methyltetrahydropyran-2-yl.

Also included are acid labile groups having the following formulae (AL-2a) and (AL-2b). The base polymer may be crosslinked within the molecule or between molecules with these acid labile groups.

In formulae (AL-2a) and (AL-2b), R^(L11) and R^(L12) are each independently hydrogen or a C₁-C₈ alkyl group which may be straight, branched or cyclic. Also, R^(L11) and R^(L12) may bond together to form a ring with the carbon atom to which they are attached, and in this case, R^(L11) and R^(L12) are each independently a C₁-C₈ straight or branched alkanediyl group. R^(L13) is each independently a C₁-C₁₀ alkanediyl group which may be straight, branched or cyclic. B1 and D1 are each independently an integer of 0 to 10, preferably 0 to 5, and C₁ is an integer of 1 to 7, preferably 1 to 3.

In formulae (AL-2a) and (AL-2b), L^(A) is a (C1+1)-valent C₁-C₅₀ aliphatic or alicyclic saturated hydrocarbon group, aromatic hydrocarbon group or heterocyclic group. In these groups, some carbon may be replaced by a heteroatom-containing moiety, or some carbon-bonded hydrogen may be substituted by a hydroxyl carboxyl, acyl moiety or fluorine. L^(A) is preferably a C₁-C₂₀ alkanediyl alkanetriyl, alkanetetrayl or C₆-C₃₀ arylene group. The alkanediyl alkanetriyl and alkanetetrayl groups may be straight, branched or cyclic. L^(B) is —CO—O—, —NHCO—O— or —NHCONH—.

Examples of the crosslinking acetal groups having formulae (AL-2a) and (AL-2b) include groups having the formulae (AL-2)-70 to (AL-2)-77.

In formula (AL-3), R^(L5), R^(L6) and R^(L7) are each independently a C₁-C₂₀ monovalent hydrocarbon group winch may contain a heteroatom such as oxygen, sulfur, nitrogen or fluorine. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof include C₁-C₂₀ alkyl groups and C₂-C₂₀ alkenyl groups. A pair of R^(L5) and R^(L6), R^(L5) and R^(L7), or R^(L6) and R^(L7) may bond together to form a C₃-C₂₀ aliphatic ring with the carbon atom to which they are attached.

Examples of the group having formula (AL-3) include tert-butyl, 1,1-diethylpropyl, 1-ethylnorbornyl, 1-methylcyclohexyl, 1-methylcyclopentyl, 1-ethylcyclopentyl, 2-(2-methyl)adamantyl, 2-(2-ethyl)adamantyl, and tert-pentyl.

Examples of the group having formula (AL-3) also include groups having the formulae (AL-3)-1 to (AL-3)-18.

In formulae (AL-3)-1 to (AL-3)-18, R^(L14) is each independently a C₁-C₆ alkyl group or C₆-C₂₀ aryl group. R^(L15) and R^(L17) are each independently hydrogen or a C₁-C₂₀ alkyl group. R^(L16) is a C₆-C₂₀ aryl group. The alkyl group may be straight, branched or cyclic. Typical of the aryl group is phenyl.

Other examples of the group having formula (AL-3) include groups having the formulae (AL-3)-19 and (AL-3)-20. The base polymer may be crosslinked within the molecule or between molecules with these acid labile groups.

In formulae (AL-3)-19 and (AL-3)-20, R^(L14) is as defined above. R^(L18) is a (E1+1)-valent C₁-C₂₀ alkanediyl group or (E1+1)-valent C₆-C₂₀ arylene group, which may contain a heteroatom such as oxygen, sulfur or nitrogen. The alkanediyl group may be straight, branched or cyclic. E1 is an integer of 1 to 3.

Examples of the monomer from which recurring units containing an acid labile group of formula (AL-3) are derived include (meth)acrylates having an exo-form structure represented by the formula (AL-3)-21.

In formula (AL-3)-21, R^(A) is as defined above. R^(Le1) is a C₁-C₈ alkyl group or an optionally substituted C₆-C₂₀ aryl group; the alkyl group may be straight, branched or cyclic. R^(Le2) to R^(Le11) are each independently hydrogen or a C₁-C₁₅ monovalent hydrocarbon group which may contain a heteroatom; oxygen is a typical heteroatom. Suitable monovalent hydrocarbon groups include G-Cis alkyl groups and C₆-C₁₅ aryl groups. Alternatively, a pair of R^(Le2) and R^(Le3), R^(Le4) and R^(Le6), R^(Le4) and R^(Le7) and R^(Le5), R^(Le5) and R^(Le11). R^(Le6) and R^(Le10), R^(Le8) and R^(Le9), or R^(Le9) and R^(Le10), taken together, may form a ring with the carbon atom to which they are attached, and in this event, the ring-forming group is a C₁-C₁₅ divalent hydrocarbon group which may contain a heteroatom. Also, a pair of R¹*² and R^(Le11), R^(Le8) and R^(Le11), or R^(Le4) and R^(Le6) which are attached to vicinal carbon atoms may bond together directly to form a double bond. The formula also represents an enantiomer.

Examples of the monomer from which recurring units having formula (AL-3)-21 are derived are described in U.S. Pat. No. 6,448,420 (JP-A 2000-327633). Illustrative non-limiting examples of suitable monomers are given below. R^(A) is as defined above.

Examples of the monomer from which the recurring units having an acid labile group of formula (AL-3) are derived include (meth)acrylates having a furandiyl, tetrahydrofurandiol or oxanorbornanediyl group as represented by the following formula (AL-3)-22.

In formula (AL-3)-22, R^(A) is as defined above. R^(Le12) and R^(Le13) are each independently a C₁-C₁₀ monovalent hydrocarbon group, or R^(Le12) and R^(Le13), taken together, may form an aliphatic ring with the carbon atom to which they are attached. R^(Le14) is furandiyl, tetrahydrofurandiyl or oxanorbornanediyl R^(Le15) is hydrogen or a C₁-C₁₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic, and examples thereof include C₁-C₁₀ alkyl groups.

Examples of the monomer from which the recurring units having formula (AL-3)-22 are derived are shown below, but not limited thereto. Herein R^(A) is as defined above.

In the base polymer, recurring units (c) having an adhesive group may be incorporated. The adhesive group is selected from hydroxyl, carboxyl, lactone ring, carbonate, thiocarbonate, carbonyl, cyclic acetal, ether bond, ester bond, sulfonic acid ester bond, cyano, amide, —O—C(═O)—S— and —O—C(═O)—NH—.

Examples of the monomer from which recurring units (c) are derived are given below, but not limited thereto. Herein R^(A) is as defined above.

In a further embodiment, recurring units (d) of at least one type selected from recurring units having the following formulae (d1), (d2) and (d3) may be incorporated in the base polymer. These units are simply referred to as recurring units (d1), (d2) and (d3), which may be used alone or in combination of two or more types.

In formulae (d1) to (d3), R^(A) is each independently hydrogen or methyl. Z¹ is a single bond, phenylene, —O—Z¹¹—, —C(═O)—O—Z¹¹— or —C(═O)—NH—Z¹¹—, wherein Z¹¹ is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group, or phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety. Z² is a single bond or ester bond. Z³ is a single bond, —Z³¹—C(═O)—O—, —Z³, —O—, or —Z³, —O—C(═O)—, wherein Z³¹ is a C₁-C₁₂ divalent hydrocarbon group which may contain a carbonyl moiety, ester bond, ether bond, bromine or iodine. Z⁴ is methylene, 2,2,2-trifluoro-1,1-ethanediyl or carbonyl. Z⁵ is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z⁵¹—, —C(═O)—O—Z⁵¹— or —C(═O)—NH—Z⁵¹—, wherein Z⁵¹ is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group, phenylene group, fluorinated phenylene group, or trifluoromethyl-substituted phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety.

In formulae (d1) to (d3), R²¹ to R²⁸ are each independently a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom, any two of R²³, R²⁴ and R²⁵ or any two of R²⁶, R²⁷ and R²⁸ may bond together to form a ring with the sulfur atom to which they are attached. The ring is preferably of 4 to 12 carbon atoms.

The monovalent hydrocarbon groups represented by R²¹ to R²⁸ may be straight, branched or cyclic and examples thereof include C₁-C₂₀, preferably C₁-C₁₂ alkyl, C₆-C₂₀, preferably C₆-C₁₂ aryl, and C₇-C₂₀ aralkyl groups. In these groups, some or all hydrogen may be substituted by C₁-C₁₀ alkyl, halogen, trifluoromethyl, cyano, nitro, hydroxyl, mercapto, C₁-C₁₀ alkoxy, C₂-C₁₀ alkoxycarbonyl, or C₂-C₁₀ acyloxy moiety, or some carbon may be replaced by a carbonyl moiety, ether bond or ester bond.

Examples of the sulfonium cation in formula (d2) or (d3) are as will be later exemplified for the cation of the sulfonium salt having formula (1-1).

In formula (d1), M⁻ is a non-nucleophilic counter ion. Examples of the non-nucleophilic counter ion include halide ions such as chloride and bromide ions; fluoroalkylsulfonate ions such as triflate, 1,1,1-trifluoroethanesulfonate, and nonafluorobutanesulfonate; arylsulfonate ions such as tosylate, benzenesulfonate, 4-fluorobenzenesulfonate, and 1,2,3,4,5-pentafluorobenzenesulfonate; alkylsulfonate ions such as mesylate and butanesulfonate: imide ions such as bis(trifluoromethylsulfonyl)imide, bis(perfluoroethylsulfonyl)imide and bis(perfluorobutylsulfonyl)imide; methide ions such as tris(trifluoromethylsulfonyl)methide and tris(perfluoroethylsulfonyl)methide.

Also included are sulfonate ions having fluorine substituted at α-position as represented by the formula (d1-1) and sulfonate ions having fluorine substituted at α-position and trifluoromethyl at β-position as represented by the formula (d1-2).

In formula (d1-1), R³¹ is hydrogen, or a C₂-C₂₀ alkyl group. C₂-C₂₀ alkenyl group, or C₆-C₂₀ aryl group, which may contain an ether bond, ester bond, carbonyl moiety, lactone ring, or fluorine atom. The alkyl and alkenyl groups may be straight, branched or cyclic.

In formula (d1-2), R³² is hydrogen, or a C₁-C₂₀ alkyl group, C₂-C₂₀ acyl group. C₂-C₂₀ alkenyl group, C₆-C₂₀ aryl group or C₆-C₂₀ aryloxy group, which may contain an ether bond, ester bond, carbonyl moiety or lactone ring. The alkyl, acyl and alkenyl groups may be straight, branched or cyclic.

Examples of the monomer from which recurring unit (d1) is derived are shown below, but not limited thereto. R^(A) and M⁻ are as defined above.

Examples of the monomer from which recurring unit (d2) is derived are shown below, but not limited thereto. R^(A) is as defined above.

As the monomer from which recurring unit (d2) is derived, compounds having the anions shown below are also preferred. R^(A) is as defined above.

Examples of the monomer from which recurring unit (d3) is derived are shown below, but not limited thereto. R^(A) is as defined above.

Recurring units (d1) to (d3) have the function of acid generator. The attachment of an acid generator to the polymer main chain is effective in restraining acid diffusion, thereby preventing a reduction of resolution due to blur by acid diffusion. Also LWR is improved since the acid generator is uniformly distributed. When a base polymer comprising recurring units (d) is used, an acid generator of addition type (to be described later) may be omitted.

The base polymer may further include recurring units (e) which contain iodine, but not amino group. Examples of the monomer from which recurring units (e) are derived are shown below, but not limited thereto. R^(A) is as defined above.

Besides the recurring units described above, further recurring unite (f) may be incorporated in the base polymer, which are derived from such monomers as styrene, vinylnaphthalene, indene, acenaphthylene, coumarin, and coumarone.

In the base polymer comprising recurring unite (a), (b1), (b2), (c), (d1), (d2), (d3), (e), and (f), a fraction of these units is: preferably 0<a<1.0, 0≤b1≤0.9, 0≤b2≤0.9, 0<b1+b2≤0.9, 0≤c≤0.9, 0≤d1≤0.5, 0≤d2≤0.5, 0≤d3≤0.5, 0≤d1+d2+d3≤0.5, 0≤e≤0.5, and 0≤f≤0.5;

more preferably 0.001≤a≤0.8, 0≤b1≤0.8, 0≤b2≤0.8, 0<b1+b2≤0.8, 0≤c≤0.8, 0≤d1≤0.4, 0≤d2≤0.4, 0≤d3≤0.4, 0≤d1+d2+d3≤0.4, 0≤e≤0.4, and 0≤f≤0.4; and even more preferably 0.01≤a≤0.7, 0≤b1≤0.7, 0≤b2≤0.7, 0<b1+b2≤0.7, 0≤, c≤0.7, 0≤d1≤0.3, 0≤d2≤0.3, 0≤d3≤0.3, 0≤d1+d2+d3≤≥0.3, 0≤e≤0.3, and 0≤f≤0.3. Notably, a+b1+b2+c+d1+d2+d3+e+f=1.0.

The base polymer may be synthesized by any desired methods, for example, by dissolving one or more monomers selected from the monomers corresponding to the foregoing recurring units in an organic solvent, adding a radical polymerization initiator thereto, and heating for polymerization. Examples of the organic solvent which can be used for polymerization include toluene, benzene, tetrahydrofuran (THF), diethyl ether, and dioxane. Examples of the polymerization initiator used herein include 2,2′-azobisisobutyrouitrile (AIBN), 2,2′-azobis(2,4-dimethylvaleionitrile), dimethyl 2,2-azobis(2-methylpropionate), benzoyl peroxide, and lauroyl peroxide. Preferably the reaction temperature is 50 to 80° C., and the reaction time is 2 to 100 hours, more preferably 5 to 20 hours.

In the case of a monomer having a hydroxyl group, the hydroxyl group may be replaced by an acetal group susceptible to deprotection with acid, typically ethoxyethoxy, prior to polymerization, and the polymerization be followed by deprotection with weak acid and water. Alternatively, the hydroxyl group may be replaced by an acetyl, formyl, pivaloyl or similar group prior to polymerization, and the polymerization be followed by alkaline hydrolysis.

When hydroxystyrene or hydroxyvinyhiaphthalene is copolymerized, an alternative method is possible. Specifically, acetoxystyrene or acetoxyvinylnaphthalene is used instead of hydroxystyrene or hydroxyvinylnaphthalene, and after polymerization, the acetoxy group is deprotected by alkaline hydrolysis, for thereby converting the polymer product to hydroxystyrene or hydroxyvinylnaphthalene. For alkaline hydrolysis, a base such as aqueous ammonia or triethylamine tatty be used. Preferably the reaction temperature is −20° C. to 100° C. more preferably 0° C. to 60° C., and the reaction time is 0.2 to 100 hours, more preferably 0.5 to 20 hours.

The base polymer should preferably have a weight average molecular weight (Mw) in the range of 1,000 to 500,000, and more preferably 2,000 to 30,000, as measured by GPC versus polystyrene standards using tetrahydrofuran (THF) solvent. With too low a Mw, the resist composition may become less heat resistant. A polymer with too high a Mw may lose alkaline solubility and give rise to a footing phenomenon after pattern formation. If a base polymer has a wide molecular weight distribution or dispersity (Mw/Mn), which indicates the presence of lower and higher molecular weight polymer fractions, there is a possibility that foreign matter is left on the pattern or the pattern profile is degraded. The influences of Mw and Mw/Mn become stronger as the pattern rule becomes finer. Therefore, the base polymer should preferably have a narrow dispersity (Mw/Mn) of 1.0 to 2.0, especially 1.0 to 1.5, in order to provide a resist composition suitable for micropatterning to a small feature size.

The base polymer may be a blend of two or more polymers which differ in compositional ratio, Mw or Mw/Mn. It may also be a blend of a polymer containing recurring units (a) and a polymer not containing recurring units (a).

Acid Generator

The positive resist composition may contain an acid generator capable of generating a strong acid, also referred to as acid generator of addition type. As used herein, the “strong acid*” is a compound having a sufficient acidity to induce deprotection reaction of add labile groups on the base polymer. The acid generator is typically a compound (PAG) capable of generating an add upon exposure to actinic ray or radiation. Although the PAG used herein may be any compound capable of generating an acid upon exposure to high-energy radiation, those compounds capable of generating sulfonic acid, imidic acid (imide acid) or methide acid are preferred. Suitable PAGs include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide, and oxime-O-sulfonate acid generators. Suitable PAGs are as exemplified in U.S. Pat. No. 7,537,880 (JP-A 2008-111103, paragraphs [0122]-[0142]).

Also sulfonium salts having the formula (1-1) and iodonium salts having the formula (1-2) are useful PAGs.

In formulae (1-1) and (1-2), R¹⁰¹ to R¹⁰⁵ are each independently a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom. Any two of R¹⁰¹, R¹⁰² and R¹⁰³ may bold together to form a ring with the sulfur atom to which they are attached, with the ring being preferably of 4 to 12 carbon atoms. The monovalent hydrocarbon group may be straight, branched or cyclic, and examples thereof are as exemplified above for R²¹ to R²⁸ in formulae (d1) to (d3).

Examples of the cation of the sulfonium salt having formula (1-1) are shown below, but not limited thereto.

Examples of the cation of the iodonium salt having formula (1-2) are shown below, but not limited thereto.

In formulae (1-1) and (1-2), X⁻ is an anion selected from the formulae (1A) to (1D).

In formula (1A), R^(fa) is fluorine or a C₁-C₄₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof are as will be exemplified below for R¹⁰⁷.

Of the anions of formula (1A), a structure having formula (1A′) is preferred.

In formula (1A′), R¹⁰⁶ is hydrogen or trifluoromethyl, preferably trifluoromethyl.

R¹⁰⁷ is a C₁-C₃₈ monovalent hydrocarbon group which may contain a heteroatom. Suitable heteroatoms include oxygen, nitrogen, sulfur and halogen, with oxygen being preferred. Of the monovalent hydrocarbon groups, those of 6 to 30 carbon atoms are preferred because a high resolution is available in fine pattern formation. The monovalent hydrocarbon group may be straight, branched or cyclic. Examples thereof include straight or branched alkyl groups such as methyl, ethyl propyl isopropyl, butyl, isobutyl sec-butyl, tert-butyl, pentyl, neopentyl, hexyl, heptyl, 2-ethylhexyl nonyl, undecyl, tridecyl, pentadecyl heptadecyl icosanyl; monovalent saturated cyclic hydrocarbon groups such as cyclopentyl cyclohexyl, 1-adamantyl, 2-adamantyl, 1-adamantylmethyl, norbornyl, norbornylmethyl, tricyclodecanyl, tetracyclododecanyl, tetracyclododecanylmethyl, dicyclohexylmethyl monovalent unsaturated aliphatic hydrocarbon groups such as allyl and 3-cyclohexenyl; aryl groups such as phenyl 1-naphthyl and 2-naphthyl; and aralkyl groups such as benzyl and diphenylmethyl. Exemplary heteroatom-containing monovalent hydrocarbon groups are tetrahydrofuryl, methoxymethyl, ethoxymethyl, methylthiomethyl, acetamidomethyl trifluoroethyl, (2-methoxyethoxy)methyl acetoxymethyl, 2-carboxy-1-cyclohexyl, 2-oxopropyl, 4-oxo-1-adamantyl, and 3-oxocyclohexyl. Also included are the foregoing groups in which some hydrogen is substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, or in which some carbon is replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so dial the group may contain a hydroxyl cyano, carbonyl, ether bond, ester bond, sulfonic acid ester bond, carbonate, lactone ring, sultone ring, carboxylic anhydride or haloalkyl moiety.

With respect to the synthesis of the sulfonium salt having an anion of formula (1A′), reference is made to JP-A 2007-145797, JP-A 2008-106045, JP-A 2009-007327, and JP-A 2009-258695. Also useful are the sulfonium salts described in JP-A 2010-215608, JP-A 2012-041320, JP-A 2012-106986, and JP-A 2012-153644.

Examples of the anion having formula (1A) are shown below, but not limited thereto.

In formula (1B), R^(fb1) and R^(fb2) are each independently fluorine or a C₁-C₄₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof are as exemplified above for R¹⁰⁷. Preferably R^(fb1) and R^(fb2) each are fluorine or a straight C₁-C₄ fluorinated alkyl group. A pair of R^(fb1) and R^(fb2) may bond together to form a ring with the linkage (—CF₂—SO₂—N⁻SO₂—CF₂—) to which they are attached, and preferably the pair is a fluorinated ethylene or fluorinated propylene group.

In formula (1C), R^(fc1), R^(fc2) and R^(fc3) are each independently fluorine or a C₁-C₄₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof are as exemplified above for R¹⁰⁷. Preferably R^(fc1), R^(fc2) and R^(fc3) each are fluorine or a straight C₁-C₄ fluorinated alkyl group. A pair of R^(fc1) and R^(fc2) may bond together to form a ring with the linkage (—CF₂—SO₂—C⁻SO₂—CF₂—) to which they are attached, and preferably the pair is a fluorinated ethylene or fluorinated propylene group.

In formula (ID), R^(fd) is a C₁-C₄₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof are as exemplified above for R¹⁰⁷.

With respect to the synthesis of the sulfonium salt having an anion of formula (ID), reference is made to JP-A 2010-215608 and JP-A 2014-133723.

Examples of the anion having formula (ID) are shown below, but not limited thereto.

The compound having the anion of formula (ID) has a sufficient acid strength to cleave acid labile groups in the base polymer because it is free of fluorine at α-position of sulfo group, but has two trifluoromethyl groups at β-position. Thus the compound is a useful PAG.

A compound having the formula (2) is also a useful PAG.

In formula (2), R²⁰¹ and R²⁰² are each independently a C₁-C₃₀ monovalent hydrocarbon group which may contain a heteroatom. R²⁰³ is a C₁-C₃₀ divalent hydrocarbon group which may contain a heteroatom. Any two of R²⁰¹. R²⁰² and R²⁰³ may bond together to form a ring with the sulfur atom to which they are attached, with the ring being preferably of 4 to 12 carbon atoms. L^(A) is a single bond, ether bond or a C₁-C₂₀ divalent hydrocarbon group which may contain a heteroatom. X^(A), X^(B), X^(C) and X^(D) are each independently hydrogen, fluorine or trifluoromethyl, with the proviso that at least one of X^(A), X^(B), X^(C) and X^(D) is fluorine or trifluoromethyl, and k is an integer of 0 to 3.

The monovalent hydrocarbon group R²⁰¹ or R²⁰² may be straight, branched or cyclic. Examples thereof include straight or branched alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, tert-pentyl, n-hexyl, n-octyl, n-nonyl, n-decyl, 2-ethylhexyl; monovalent saturated cyclic hydrocarbon groups such as cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, norbomyl, oxanorbomyl, tricyclo[5.2.1.0^(2,6)]decanyl, adamantyl; and aryl groups such as phenyl, naphthyl and anthracenyl. Also included are the foregoing groups in which some hydrogen is substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, or in which some carbon is replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxyl, cyano, carbonyl, ether bond, ester bond, sulfonic acid ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride or haloalkyl moiety.

The divalent hydrocarbon group R²⁰³ may be straight, branched or cyclic. Examples thereof include straight or branched alkanediyl groups such as methylene, ethylene, propane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, heptane-1,7-diyl, octane-1,8-diyl, nonane-1,9-diyl, decane-1,10-diyl, undecane-1,11-diyl, dodecane-1,12-diyl, tridecane-1,13-diyl, tetradecane-1,14-diyl, pentadecane-1,15-diyl, hexadecane-1,16-diyl, heptadecane-1,17-diyl; divalent saturated cyclic hydrocarbon groups such as cyclopentanediyl, cyclohexanediyl, norbornanediyl, and adamantanediyl; and arylene groups such as phenylene and naphthylene. Also included are the foregoing groups in which some hydrogen is substituted by an alkyl group such as methyl ethyl, propyl, n-butyl or tert-butyl, or in which some hydrogen is substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, or in which some carbon is replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxyl, cyano, carbonyl, ether bond, ester bond, sulfonic acid ester bond, carbonate, lactone ring, sultone ring, carboxylic anhydride or haloalkyl moiety. The preferred heteroatom is oxygen.

Of the PAGs having formula (2), those having formula (2′) are preferred.

In formula (2′), L^(A) is as defined above. R^(HF) is hydrogen or trifluoromethyl, preferably trifluoromethyl. R³⁰¹. R³⁰² and R³⁰³ are each independently hydrogen or a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof are as exemplified above for R¹⁰⁷. The subscripts x and y each are an integer of 0 to 5, and z is an integer of 0 to 4.

Examples of the PAG having formula (2) are shown below, but not limited thereto. Herein R^(HF) is as defined above.

Of the foregoing PAGs, those compounds having an anion of formula (1A′) or (ID) are especially preferred because of reduced acid diffusion and high solubility in resist solvent, and those compounds having an anion of formula (2′) are especially preferred because of minimized acid diffusion.

Also sulfonium and iodonium salts having an anion containing an iodized or brominated aromatic ring are useful PAGs. These salts typically have the formulae (3-1) and (3-2).

In formulae (3-1) and (3-2), X^(BI) is iodine or bromine, and groups X^(BI) may be identical or different when and/or s is 2 or more.

L¹¹ is a single bond, ether bond, ester bond, or a C₁-C₆ alkanediyl group which may contain an ether bond or ester bond. The alkanediyl group may be straight, branched or cyclic.

R⁴⁰¹ is hydroxyl, carboxyl, fluorine, chlorine, bromine, amino or a C₁-C₂₀ alkyl group, C₁-C₂₀ alkoxy group, C₂-C₂₀ alkoxycarbonyl, C₂-C₂₀ acyloxy group, or C₁-C₂₀ alkylsulfonyloxy group, which may contain fluorine, chlorine, bromine, hydroxyl, amino or C₁-C₁₀ alkoxy moiety, or —NR^(401A)—C(═O)—R^(401B) or —NR^(401A)—C(═O)—O—R^(401B). R^(401A) is hydrogen or a C₁-C₆ alkyl group which may contain halogen, hydroxyl, C₁-C₆ alkoxy, C₂-C₆ acyl or C₂-C₆ acyloxyl moiety, R⁴⁰¹⁸ is a C₁-C₁₆ alkyl group, C₂-C₁₆ alkenyl group or C₆-C₁₂ aryl group, which may contain halogen, hydroxyl, a C₁-C₆ alkoxy, C₂-C₆ acyl or C₂-C₆ acyloxy moiety. The alkyl, alkoxy, alkoxycarbonyl, acyloxy, acyl and alkenyl groups may be straight, branched or cyclic. When r and/or t is 2 or more, groups R⁴⁰¹ may be identical or different. Inter alia, R⁴⁰¹ is preferably selected from hydroxyl, —NR^(401A)—C(═O)—R^(401B), —NR^(401A)—C(═O)—O—R^(401B), fluorine, chlorine, bromine, methyl, and methoxy.

R⁴⁰² is a single bond or a C₁-C₂₀ divalent linking group in case of r=1, and a C₁-C₂₀ (r+1)-valent linking group in case of r=2 or 3. The linking group may contain oxygen, sulfur or nitrogen.

R^(f11) to R^(f14) are each independently hydrogen, fluorine or trifluoromethyl, at least one thereof being fluorine or trifluoromethyl. Also Rf¹¹ and Rf¹², taken together, may form a carbonyl group. Most preferably both Rf¹³ and Rf¹⁴ are fluorine.

R⁴⁰³, R⁴⁰⁴, R⁴⁰⁵, R⁴⁰⁶ and R⁴⁰⁷ are each independently a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom. Any two of R⁴⁰³, R⁴⁰⁴ and R⁴⁰⁵ may bond together to form a ring with the sulfur atom to which they are attached, with the ring being preferably of 4 to 12 carbon atoms. The monovalent hydrocarbon group may be straight, branched or cyclic and examples thereof include C₁-C₂₀, preferably C₁-C₁₂ alkyl groups, C₂-C₂₀, preferably C₂-C₁₂ alkenyl groups, C₂-C₂₀, preferably C₂-C₁₂ alkynyl groups, C₆-C₂₀ aryl groups, and C₇-C₁₂ aralkyl groups. In these groups, some or all hydrogen may be substituted by hydroxyl, carboxyl, halogen, cyano, amide, nitro, mercapto, sultone, sulfone, or sulfonium salt-containing moiety; or some carbon may be replaced by an ether bond, ester bond, carbonyl, carbonate or sulfonic acid ester bond.

The subscript r is an integer of 1 to 3. The subscript s is an integer of 1 to 5, and t is an integer of 0 to 3, meeting 1≤s+t≤5. Preferably, s is 1, 2 or 3, more preferably 2 or 3, and t is 0, 1 or 2.

The cation moiety in the sulfonium salt having formula (3-1) is as exemplified above for the cation moiety in the sulfonium salt having formula (1-1). The cation moiety in the iodonium salt having formula (3-2) is as exemplified above for the cation moiety in the iodonium salt having formula (1-2).

The anion moiety in the onium salt having formula (3-1) or (3-2) is as exemplified above for the anion in the monomer from which recurring units (a) are derived.

In the positive resist composition, the acid generator of addition type is preferably used in an amount of 0.1 to 50 parts, more preferably 1 to 40 parts by weight per 100 parts by weight of the base polymer. When the base polymer contains recurring units (d1) to (d3) and/or the add generator of addition type is added, the positive resist composition functions as a chemically amplified positive resist composition.

Organic Solvent

The positive resist composition may contain an organic solvent. The organic solvent is not particularly limited as long as the foregoing components and other components are dissolvable therein. Examples of the organic solvent used herein are described in U.S. Pat. No. 7,537,880 (JP-A 2008-111103, paragraphs [0144]-[0145]). Exemplary solvents include ketones such as cyclohexanone, cyclopentanone, methyl-2-n-pentyl ketone, and 2-heptanone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol (DAA); ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether, esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono-tert-butyl ether acetate; and lactones such as γ-butyrolactone, and mixtures thereof.

The organic solvent is preferably added in an amount of 100 to 10,000 parts, and more preferably 200 to 8,000 parts by weight per 100 parts by weight of the base polymer.

Other Components

In addition to the foregoing components, other components such as surfactant and dissolution inhibitor may be blended in any desired combination to formulate a positive resist composition. This positive resist composition has a very high sensitivity in that the dissolution rate in developer of the base polymer in exposed areas is accelerated by catalytic reaction. In addition, the resist film has a high dissolution contrast, resolution, exposure latitude, and process adaptability, and provides a good pattern profile after exposure, and minimal proximity bias because of restrained acid diffusion. By virtue of these advantages, the composition is fully useful in commercial application and suited as a pattern-forming material for the fabrication of VLSIs.

Exemplary surfactants are described in JP-A 2008-111103, paragraphs [0165]-[0166], Inclusion of a surfactant may improve or control the coating characteristics of the resist composition. The surfactant may be used alone or in admixture. The surfactant is preferably added in an amount of 0.0001 to 10 parts by weight per 100 parts by weight of the base polymer.

The inclusion of a dissolution inhibitor may lead to an increased difference in dissolution rate between exposed and unexposed areas and a further improvement in resolution.

The dissolution inhibitor which can be used herein is a compound having at least two phenolic hydroxyl groups on the molecule, in which an average of from 0 to 100 mol % of all the hydrogen atoms on the phenolic hydroxyl groups are replaced by acid labile groups or a compound having at least one carboxyl group on the molecule, in which an average of 50 to 100 mol % of all the hydrogen atoms on the carboxyl groups are replaced by acid labile groups, both the compounds having a molecular weight of 100 to 1,000, and preferably 150 to 800. Typical are bisphenol A, trisphenol, phenolphthalein, cresol novolac, naphthalenecarboxylic acid, adamantanecarboxylic acid, and cholic acid derivatives in which the hydrogen atom MI the hydroxyl or carboxyl group is replaced by an acid labile group, as described in U.S. Pat. No. 7,771,914 (JP-A 2008-122932, paragraphs [0155]-[0178]).

The dissolution inhibitor is preferably added in an amount of 0 to 50 parts, more preferably 5 to 40 parts by weight per 100 parts by weight of the base polymer.

In the resist composition, another quencher may be blended. The other quencher is typically selected from conventional basic compounds. Conventional basic compounds include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds with carboxyl group, nitrogen-containing compounds with sulfonyl group, nitrogen-containing compounds with hydroxyl group, nitrogen-containing compounds with hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives, and carbamate derivatives. Also included are primary, secondary, and tertiary amine compounds, specifically amine compounds having a hydroxyl, ether bond, ester bond, lactone ring, cyano, or sulfonic acid ester bond as described in JP-A 2008-111103, paragraphs [0146]-[0164], and compounds having a carbamate group as described in JP 3790649. Addition of a basic compound may be effective for further suppressing the diffusion rate of acid in the resist film or correcting the pattern profile.

Suitable other quenchers also include onium salts such as sulfonium salts, iodonium salts and ammonium salts of sulfonic acids which are not fluorinated at α-position and similar onium salts of carboxylic acid, as described in JP-A 2008-158339. While an α-fluorinated sulfonic acid, imide add, and methide acid are necessary to deprotect the acid labile group of carboxylic acid ester, an α-non-fluorinated sulfonic acid or a carboxylic acid is released by salt exchange with an α-non-fluorinated onium salt. An α-non-fluorinated sulfonic acid and a carboxylic acid function as a quencher because they do not induce deprotection reaction.

Also useful are quenchers of polymer type as described in U.S. Pat. No. 7,598,016 (JP-A 2008-239918). The polymeric quencher segregates at the resist surface after coating and thus enhances the rectangularity of resist pattern. When a protective film is applied as is often the case in the immersion lithography, the polymeric quencher is also effective for preventing a film thickness loss of resist pattern or rounding of pattern top.

In the resist composition, the other quencher is preferably added in an amount of 0 to 5 parts, more preferably 0 to 4 parts by weight per 100 parts by weight of the base polymer. The quenchers may be used alone or in admixture.

To the resist composition, a water repellency improver may also be added for improving the water repellency on surface of a resist film as spin coated. The water repellency improver may be used in the topcoatless immersion lithography. Suitable water repellency improvers include polymers having a fluoroalkyl group and polymers having a specific structure with a 1,1,1,3,3,3-hexafluoro-2-propanol residue and are described in JP-A 2007-297590 and JP-A 2008-111103, for example. The water repellency improver to be added to the resist composition should be soluble in the organic solvent as the developer. The water repellency improver of specific structure with a 1,1,1,3,3,3-hexafluoro-2-propanol residue is well soluble in the developer. A polymer having an amino group or amine salt copolymerized as recurring units may serve as the water repellent additive and is effective for preventing evaporation of acid during PEB, thus preventing any hole pattern opening failure after development. An appropriate amount of the water repellency improver is 0 to 20 parts, preferably 0.5 to 10 parts by weight per 100 parts by weight of the base polymer.

Also, an acetylene alcohol may be blended in the resist composition. Suitable acetylene alcohols are described in JP-A 2008-122932, paragraphs [0179]-[0182]. An appropriate amount of the acetylene alcohol blended is 0 to 5 parts by weight per 100 parts by weight of the base polymer.

Process

The positive resist composition is used in the fabrication of various integrated circuits. Pattern formation using the resist composition may be performed by well-known lithography processes. The process generally involves coating, exposure, and development. If necessary, any additional steps may be added.

For example, the positive resist composition is first applied onto a substrate on which an integrated circuit is to be formed (e.g., Si, SiO₂, SiN, SiON, TiN, WSi, BPSG, SOG, or organic antireflective coating) or a substrate on which a mask circuit is to be formed (e.g., Cr, CrO, CrON, MoSi₂, or SiO₂) by a suitable coating technique such as spin coating, roll coating, flow coating, dipping, spraying or doctor coating. The coating is prebaked on a hotplate at a temperature of 60 to 150° C. for 10 seconds to 30 minutes, preferably at 80 to 120° C. for 30 seconds to 20 minutes. The resulting resist film is generally 0.01 to 2 μm thick.

The resist film is then exposed to a desired pattern of high-energy radiation such as UV, deep-UV, EB, EUV of wavelength 3 to 15 nm, x-ray, soft x-ray, excimer laser light, γ-ray or synchrotron radiation. When UV, deep-UV, EUV, x-ray, soft x-ray, excimer laser light, γ-ray or synchrotron radiation is used as the high-energy radiation, the resist film is exposed thereto through a mask having a desired pattern in a dose of preferably about 1 to 200 mJ/cm², more preferably about 10 to 100 mJ/cm². When EB is used as the high-energy radiation, the resist film is exposed thereto through a mask having a desired pattern or directly in a dose of preferably about 0.1 to 100 μC/cm², more preferably about 0.5 to 50 μC/cm². It is appreciated that the inventive resist composition is suited in micropatterning using KrF excimer laser, ArF excimer laser, EB, EUV, x-ray, soft x-ray, γ-ray or synchrotron radiation, especially in micropatterning using EB or EUV.

After the exposure, the resist film may be baked (PEB) on a hot plate preferably at 50 to 150° C. for 10 seconds to 30 minutes, more preferably at 60 to 120° C. for 30 seconds to 20 minutes.

After the exposure or PEB, the resist film is developed in a developer in the form of an aqueous base solution for 3 seconds to 3 minutes, preferably 5 seconds to 2 minutes by conventional techniques such as dip, puddle and spray techniques. A typical developer is a 0.1 to 10 wt %, preferably 2 to 5 wt % aqueous solution of tetramethylammonium hydroxide (TMAH), tetramethylammonium hydroxide (TEAM), tetrapropylammonium hydroxide (TPAH), or tetrabutylammonium hydroxide (TBAH). The resist film in the exposed area is dissolved in the developer whereas the resist film in the unexposed area is not dissolved.

In this way, the desired positive pattern is formed on the substrate, labile alternative embodiment, a negative pattern may be formed via organic solvent development using a positive resist composition comprising a base polymer having an acid labile group. The developer used herein is preferably selected from among 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxy isobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate, and mixtures thereof.

At the end of development, the resist film is rinsed. As the rinsing liquid, a solvent which is miscible with the developer and does not dissolve the resist film is preferred. Suitable solvents include alcohols of 3 to 10 carbon atoms, ether compounds of 8 to 12 carbon atoms, alkanes, alkenes, and alkynes of 6 to 12 carbon atoms, and aromatic solvents. Specifically, suitable alcohols of 3 to 10 carbon atoms include n-propyl alcohol isopropyl alcohol, 1-butyl alcohol, 2-butyl alcohol isobutyl alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, tert-pentyl alcohol neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl-3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol, 2,3-dimethyl-2-butanol 3,3-dimethyl-1-butanol, 3,3-dimethyl-2-butanol 2-ethyl-1-butanol 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol 3-methyl-2-pentanol 3-methyl-3-pentanol, 4-methyl-1-pentanol 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclohexanol, and 1-octanol. Suitable ether compounds of 8 to 12 carbon atoms include di-n-butyl ether, diisobutyl ether, di-sec-butyl ether, di-n-pentyl ether, diisopentyl ether, di-sec-pentyl ether, di-tert-pentyl ether, and di-n-hexyl ether. Suitable alkanes of 6 to 12 carbon atoms include hexane, heptane, octane, nonane, decane, undecane, dodecane, methylcyclopentane, dimethylcycyclopentane, cyclohexane, methylcyclohexane, dimethylcyclohexane, cycloheptane, cyclooctane, and cyclononane. Suitable alkenes of 6 to 12 carbon atoms include hexene, heptene, octene, cyclohexene, methylcyclohexene, dimethylcyclohexene, cycloheptene, and cyclooctene. Suitable alkynes of 6 to 12 carbon atoms include hexyne, heptyne, and octyne. Suitable aromatic solvents include toluene, xylene, ethylbenzene, isopropylbenzene, tert-butylbenzene and mesitylene.

Rinsing is effective for minimizing the risks of resist pattern collapse and defect formation. However, rinsing is not essential. If rinsing is omitted, the amount of solvent used may be reduced.

A hole or trench pattern after development may be shrunk by the thermal flow, RELACS® or DSA process. A hole pattern is shrank by coating a shrink agent thereto, and baking such that the shrink agent may undergo crosslinking at the resist surface as a result of the add catalyst diffusing from the resist layer during bake, and the shrink agent may attach to the sidewall of the hole pattern. The bake is preferably at a temperature of 70 to 180° C., more preferably 80 to 170° C., for a time of 10 to 300 seconds. The extra shrink agent is stripped and the hole pattern is shrunk.

EXAMPLES

Examples of the invention are given below by way of illustration and not by way of limitation. All parts are by weight (pbw). Mw and Mw/Mn are determined by GPC versus polystyrene standards using THE solvent.

[1] Synthesis of Monomers Synthesis Examples 1-1 to 1-11 Synthesis of Monomers 1 to 11

Monomer 1 of the following formula was prepared by mixing 2-(dimethylamino)ethyl methacrylate with an iodized benzoyloxy-containing fluorosulfonic acid in a molar ratio of 1/1. Monomers 2 to 11 were similarly obtained by mixing a nitrogen-containing monomer with a fluorosulfonic acid having iodized or brominated aromatic ring.

[2] Synthesis of Polymers

PAG Monomers 1 to 3 identified below were used in the synthesis of polymers.

Synthesis Example 2-1 Synthesis of Polymer 1

A 2-L flask was charged with 4.3 g of Monomer 1, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 5.4 g of 4-hydroxystyrene, and 40 g of tetrahydrofuran (THF) as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of azobisisobutyronitrile (AIBN) was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 1. Polymer 1 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-2 Synthesis of Polymer 2

A 2-L flask was charged with 4.1 g of Monomer 2.7.3 g of 1-methyl-1-cyclohexyl methacrylate, 5.0 g of 4-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 2. Polymer 2 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-3 Synthesis of Polymer 3

A 2-L flask was charged with 3.5 g of Monomer 3, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.6 g of 3-hydroxystyrene, 11.9 g of PAG Monomer 1, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 3. Polymer 3 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-4 Synthesis of Polymer 4

A 2-L flask was charged with 4.7 g of Monomer 4, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.6 g of 3-hydroxystyrene, 12.1 g of PAG Monomer 3, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 4. Polymer 4 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-5 Synthesis of Polymer 5

A 2-L flask was charged with 3.8 g of Monomer 5, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.6 g of 3-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 5. Polymer 5 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-6 Synthesis of Polymer 6

A 2-L flask was charged with 3.6 g of Monomer 6, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 1.8 g of 4-hydroxystyrene, 3.7 g of 3,5-diiodo-4-hydroxystyrene, 12.1 g of PAG Monomer 3, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 6. Polymer 6 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-7 Synthesis of Polymer 7

A 2-L flask was charged with 6.4 g of Monomer 7, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.4 g of 3-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 7. Polymer 7 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-8 Synthesis of Polymer 8

A 2-L flask was charged with 6.3 g of Monomer 8, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.4 g of 3-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 8. Polymer 8 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-9 Synthesis of Polymer 9

A 2-L flask was charged with 4.6 g of Monomer 9, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.4 g of 3-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 9. Polymer 9 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-10 Synthesis of Polymer 10

A 2-L flask was charged with 3.1 g of Monomer 10, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 3.8 g of 3-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C. yielding Polymer 10. Polymer 10 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Synthesis Example 2-11 Synthesis of Polymer 11

A 2-L flask was charged with 2.3 g of Monomer 11, 7.3 g of 1-methyl-1-cyclohexyl methacrylate, 5.0 g of 4-hydroxystyrene, 11.0 g of PAG Monomer 2, and 40 g of THF as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added. The reactor was heated at 60° C. whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 11. Polymer 11 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Comparative Synthesis Example 1

Comparative Polymer 1 was obtained by the same procedure as in Synthesis Example 2-1 except that Monomer 1 was omitted. Comparative Polymer 1 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Comparative Synthesis Example 2

Comparative Polymer 2 was obtained by the same procedure as in Synthesis Example 2-1 except that 2-(dimethylamino)ethyl methacrylate was used instead of Monomer 1. Comparative Polymer 2 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

Comparative Synthesis Example 3

Comparative Polymer 3 was obtained by the same procedure as in Synthesis Example 2-2 except that Monomer 2 was omitted and 1-methyl-1-cyclopentyl methacrylate was used instead of 1-methyl-1-cyclohexyl methacrylate. Comparative Polymer 3 was analyzed for composition by ¹³C- and ¹H-NMR and for Mw and Mw/Mn by GPC.

[3] Preparation and Evaluation of Positive Resist Composition Examples 1 to 11 and Comparative Examples 1 to 3

Positive resist compositions were prepared by dissolving components in a solvent in accordance with the recipe shown in Table 1, and filtering through a filter having a pore size of 0.2 μm. The solvent contained 100 ppm of surfactant FC-4430 (3M). The components in Table 1 are as identified below.

Organic Solvents:

PGMEA (propylene glycol monomethyl ether acetate)

DAA (diacetone alcohol)

Acid generator. PAG-1 of the following structural formula Quencher: Q-1 of the following structural formula

EUV Lithography Test

Each of the resist compositions in Table 1 was spin coated on a silicon substrate having a 20-nm coating of silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., Si content 43 wt %) and prebaked on a hotplate at 105° C. for 60 seconds to form a resist film of 50 nm thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, σ0.9/0.6, quadrupole illumination), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and +20% bias. The resist film was baked (PEB) on a hotplate at the temperature shown in Table 1 for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a hole pattern having a size of 23 nm.

The resist pattern was observed under CD-SEM (CG-5000, Hitachi High-Technologies Corp.). The exposure dose that provides a hole pattern having a size of 23 inn is reported as sensitivity. The size of 50 holes was measured, from which a size variation (3σ) was computed and reported as CDU.

The resist composition is shown in Table 1 together with the sensitivity and CDU of EUV lithography.

TABLE 1 Acid PEB generator Quencher Organic temp. Sensitivity CDU Polymer (pbw) (pbw) (pbw) solvent (pbw) (° C.) (mJ/cm²) (nm) Example 1 Polymer 1 (100) PAG-1 Q-1 PGMEA (2,000) 95 24 3.0 (25.0) (3.00) DAA (500) 2 Polymer 2 (100) — Q-1 PGMEA (2,000) 95 22 2.3 (3.00) DAA (500) 3 Polymer 3 (100) — Q-1 PGMEA (2,000) 95 23 2.3 (3.00) DAA (500) 4 Polymer 4 (100) — Q-1 PGMEA (2,000) 95 22 2.6 (3.00) DAA (500) 5 Polymer 5 (100) — Q-1 PGMEA (2,000) 95 26 2.6 (3.00) DAA (500) 6 Polymer 6 (100) — Q-1 PGMEA (2,000) 95 25 2.6 (3.00) DAA (500) 7 Polymer 7 (100) — Q-1 PGMEA (2,000) 95 23 2.2 (3.00) DAA (500) 8 Polymer 8 (100) — Q-1 PGMEA (2,000) 95 23 2.4 (3.00) DAA (500) 9 Polymer 9 (100) — Q-1 PGMEA (2,000) 95 22 2.4 (3.00) DAA (500) 10 Polymer 10 (100) — Q-1 PGMEA (2,000) 95 24 2.6 (3.00) DAA (500) 11 Polymer 11 (100) — Q-1 PGMEA (2,000) 95 25 2.7 (3.00) DAA (500) Comparative 1 Comparative PAG-1 Q-1 PGMEA (2,000) 95 35 5.6 Example Polymer 1 (100) (25.0) (3.00) DAA (500) 2 Comparative PAG-1 — PGMEA (2,000) 95 38 4.7 Polymer 2 (100) (25.0) DAA (500) 3 Comparative — Q-1 PGMEA (2,000) 95 35 3.9 Polymer 3 (100) (3.00) DAA (500)

It is demonstrated in Table 1 that positive resist compositions comprising a base polymer comprising recurring units having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring offer a high sensitivity and improved CDU.

Japanese Patent Application No. 2019-125347 is incorporated herein by reference.

Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims. 

1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring, and recurring unite of at least one type selected from recurring unite (b1) having a carboxyl group substituted with an acid labile group and recurring unite (b2) having a phenolic hydroxyl group substituted with an acid labile group.
 2. The resist composition of claim 1 wherein the recurring units (a) have the formula (a):

wherein R^(A) is hydrogen or methyl, X^(1A) is a single bond, ester bond or amide bond, X^(1B) is a single bond or a C₁-C₂₀ di- or trivalent hydrocarbon group which may contain an ether bond, carbonyl moiety, ester bond, amide bond, sultone moiety, lactam moiety, carbonate moiety, halogen, hydroxyl moiety or carboxyl moiety, R¹, R² and R³ are each independently hydrogen, a C₁-C₁₂ straight or branched alkyl group, C₂-C₁₂ straight or branched alkenyl group, C₆-C₁₂ aryl group, or C₇-C₁₂ aralkyl group, R¹ and R², or R¹ and X^(1B) may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain oxygen, sulfur, nitrogen or a double bond, R⁴ is a hydroxyl group, carboxyl group, fluorine, chlorine, bromine, amino group, or a C₁-C₂₀ alkyl group, C₁-C₂₀ alkoxy group, C₂-C₂₀ alkoxycarbonyl group, C₂-C₂₀ acyloxy group, or C₁-C₂₀ alkylsulfonyloxy group, which may contain fluorine, chlorine, bromine, hydroxyl, amino, or C₁-C₁₀ alkoxy moiety, or —NR^(4A)—C(═O)—R^(4B), or —NR^(4A)—C(═O)—O—R^(4B), R^(4A) is hydrogen or a C₁-C₆ alkyl group which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety, R^(4B) is a C₁-C₁₆ alkyl group, C₂-C₁₆ alkenyl group or C₆-C₁₂ aryl group, which may contain halogen, hydroxyl, C₁-C₆ alkoxy moiety, C₂-C₆ acyl moiety or C₂-C₆ acyloxy moiety, R⁴ may be the same or different when n and/or q is 2 or 3, Rf¹ to Rf⁴ are each independently hydrogen, fluorine or trifluoromethyl, at least one of Rf¹ to Rf⁴ being fluorine or trifluoromethyl, Rf¹ and Rf², taken together, may form a carbonyl group, X^(BI) is iodine or bromine, X^(BI) may be the same or different when m and/or q is 2 or more, L¹ is a single bond, ether bond, ester bond, or a C₁-C₆ alkanediyl group which may contain an ether bond or ester bond, L² is a single bond or a C₁-C₂₀ divalent linking group when q=1, or a C₁-C₂₀ (q+1)-valent linking linking group when q=2 or 3, the linking group may contain oxygen, sulfur or nitrogen, m is an integer of 1 to 5, n is an integer of 0 to 3, 1≤m+n≤5, p is 1 or 2, and q is an integer of 1 to
 3. 3. The resist composition of claim 1 wherein the recurring units (b1) have the formula (b1) and the recurring units (b2) have the formula (b2):

wherein R^(A) is each independently hydrogen or methyl, R¹¹ and R¹² each are an acid labile group, R¹³ is a C₁-C₆ alkyl group, C₁-C₆ alkoxy group, C₂-C₆ acyl group, C₂-C₆ acyloxy group, halogen, nitro, or cyano, Y¹ is a single bond, phenyleue, naphthylene, or a C₁-C₁₂ linking group containing an ester bond and/or lactone ring, Y² is a single bond or ester bond, and k is an integer of 0 to
 4. 4. The resist composition of claim 1 wherein the base polymer Anther comprises recurring units of at least one type selected from recurring units having the formulae (d1) to (d3):

wherein R^(A) is hydrogen or methyl, Z¹ is a single bond, phenylene, —O—Z¹¹—, —C(═O)—O—Z¹¹— or —C(═O)—NH—Z¹¹—, Z¹¹ is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group or phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety, Z² is a single bond or ester bond, Z³ is a single bond, —Z³¹—C(═O)—O—, —Z³¹—O—, or —Z³¹—O—C(═O)—, Z³¹ is a C₁-C₁₂ divalent hydrocarbon group which may contain a carbonyl moiety, ester bond, ether bond, bromine or iodine, Z⁴ is methylene, 2,2,2-trifluoro-1,1-ethanediyl or carbonyl, Z⁵ is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z⁵¹—, —C(═O)—O—Z⁵¹— or —C(═O)—NH—Z⁵¹—, Z⁵¹ is a C₁-C₆ alkanediyl group, C₂-C₆ alkenediyl group, phenylene group, fluorinated phenylene group or trifluoromethyl-substituted phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxyl moiety, R²¹ to R²⁸ are each independently a C₁-C₂₀ monovalent hydrocarbon group which may contain a heteroatom, any two of R²³, R²⁴ and R²⁵ or any two of R²⁵, R²⁷ and R²⁸ may bond together to form a ring with the sulfur atom to which they are attached, and M⁻ is a non-nucleophilic counter ion.
 5. The resist composition of claim 1, further comprising an acid generator capable of generating a sulfonic acid, sulfone imide or sulfone methide.
 6. The resist composition of claim 1, further comprising an organic solvent.
 7. The resist composition of claim 1, further comprising a dissolution inhibitor.
 8. The resist composition of claim 1, further comprising a surfactant.
 9. A pattern forming process comprising the steps of applying the positive resist composition of claim 1 to form a resist film on a substrate, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer.
 10. The process of claim 9 wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.
 11. The process of claim 9 wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. 